The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Dec. 30, 2009
Applicants:
Jae Won Cha, Gyeonggi-do, KR;
Duck Ju Kim, Gyeonggi-do, KR;
Inventors:
Jae Won Cha, Gyeonggi-do, KR;
Duck Ju Kim, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of testing for a leakage current between bit lines of a nonvolatile memory device includes providing the nonvolatile memory device with a page buffer having first and second bit lines coupled thereto, precharging the first bit line to a first voltage, supplying a second voltage to the second bit line, floating the second bit line and evaluating the second bit line for a set time period, and detecting a voltage level of the second bit line and outputting a test result of testing for the leakage current between the first and second bit lines by the page buffer.