The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Aug. 22, 2007
Nobuaki Takahashi, Kanagawa, JP;
Masahiro Komuro, Kanagawa, JP;
Koji Soejima, Kanagawa, JP;
Satoshi Matsui, Kanagawa, JP;
Masaya Kawano, Kanagawa, JP;
Nobuaki Takahashi, Kanagawa, JP;
Masahiro Komuro, Kanagawa, JP;
Koji Soejima, Kanagawa, JP;
Satoshi Matsui, Kanagawa, JP;
Masaya Kawano, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.