The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Jun. 19, 2009
Serhii Tumakha, San Jose, CA (US);
Boon Y. Ang, Sunnyvale, CA (US);
Amit Ghia, San Jose, CA (US);
Jan L. DE Jong, Cupertino, CA (US);
Serhii Tumakha, San Jose, CA (US);
Boon Y. Ang, Sunnyvale, CA (US);
Amit Ghia, San Jose, CA (US);
Jan L. de Jong, Cupertino, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A fuse structure for a semiconductor integrated circuit (IC) includes an anode comprising conductive material overlaying a diffusion material disposed within a substrate layer of the IC, wherein the diffusion material is electrically isolated from the substrate layer by at least one p-n junction. The fuse structure can include a cathode comprising conductive material overlaying the diffusion material. The fuse structure further can include a fuse link comprising conductive material overlaying the diffusion material, wherein a first end of the fuse link couples to the anode and a second end of the fuse link, that is distal to the first end, couples to the cathode.