The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Apr. 23, 2010
Joon-ho Sung, Busan, KR;
Ju-yong Lee, Gyeonggi-do, KR;
Mi-kyung Park, Gyeonggi-do, KR;
Tae-young Chung, Gyeonggi-do, KR;
Joon-ho Sung, Busan, KR;
Ju-yong Lee, Gyeonggi-do, KR;
Mi-kyung Park, Gyeonggi-do, KR;
Tae-young Chung, Gyeonggi-do, KR;
Abstract
Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.