The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Apr. 21, 2006
Thomas Henry Pinnington, Pasadena, CA (US);
James M. Zahler, Pasadena, CA (US);
Young-bae Park, Arcadia, CA (US);
Charles Tsai, Arcadia, CA (US);
Corinne Ladous, Pasadena, CA (US);
Harry A. Atwater, Jr., South Pasadena, CA (US);
Sean Olson, Santa Monica, CA (US);
Thomas Henry Pinnington, Pasadena, CA (US);
James M. Zahler, Pasadena, CA (US);
Young-Bae Park, Arcadia, CA (US);
Charles Tsai, Arcadia, CA (US);
Corinne Ladous, Pasadena, CA (US);
Harry A. Atwater, Jr., South Pasadena, CA (US);
Sean Olson, Santa Monica, CA (US);
Other;
Abstract
An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.