The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Oct. 15, 2008
Takeshi Sato, Kokubunji, JP;
Yoshiaki Toyota, Hachioji, JP;
Takeshi Sato, Kokubunji, JP;
Yoshiaki Toyota, Hachioji, JP;
Hitachi Displays, Ltd., Chiba, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo-ken, JP;
Abstract
A method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced. The method includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone mask instead of some of normal masks to reduce the number of masks, and changing impurity concentrations of semiconductor films located in regions which become a channel of the n-type TFT, a source and a drain of the n-type TFT, a channel of the p-type TFT, a source and a drain of the p-type TFT, and an lower capacitor electrode, by using a pattern of the half-tone mask and a normal mask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile