The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Mar. 27, 2009
Crocifisso Marco Antonio Renna, Gela, IT;
Alessandro Auditore, Giarre, IT;
Alessio Romano, Catania, IT;
Sebastiano Ravesi, Sant'Agata Li Battiati, IT;
Crocifisso Marco Antonio Renna, Gela, IT;
Alessandro Auditore, Giarre, IT;
Alessio Romano, Catania, IT;
Sebastiano Ravesi, Sant'Agata Li Battiati, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A method manufactures a gas sensor integrated on a semiconductor substrate. The method includes: realizing a first plurality of openings in the semiconductor substrate; realizing a crystalline silicon membrane suspended on the semiconductor substrate, forming an insulating cavity buried in the substrate; realizing a second plurality of openings in the semiconductor substrate, so as to totally suspend on the semiconductor substrate the crystalline silicon membrane; realizing, through a thermal oxidation process of the totally suspended crystalline silicon membrane, a suspended dielectric membrane; realizing, through selective photolithography, a heating element; realizing, through selective photolithography, electrodes and a pair of electric contacts; and selectively realizing, above the electrodes, a sensitive element by compacting layers of metallic oxide through a sintering process generated in the gas sensor by connecting the electrodes to a voltage generator.