The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Mar. 19, 2008
Ki-chul Kim, Daejeon, KR;
Sung-lyul Maeng, Cheongju, KR;
Sung-jin Shin, Jeonjoo, KR;
Dae-joon Kang, Jeju, KR;
Ki-Chul Kim, Daejeon, KR;
Sung-Lyul Maeng, Cheongju, KR;
Sung-Jin Shin, Jeonjoo, KR;
Dae-Joon Kang, Jeju, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.