The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Dec. 15, 2008
Uwe Sahr, Nuremberg, DE;
Matthias Mueller, Jena, DE;
Ingo Schwirtlich, Miltenberg, DE;
Frank-thomas Lentes, Bingen, DE;
Frank Buellesfeld, Frankfurt am Main, DE;
Uwe Sahr, Nuremberg, DE;
Matthias Mueller, Jena, DE;
Ingo Schwirtlich, Miltenberg, DE;
Frank-Thomas Lentes, Bingen, DE;
Frank Buellesfeld, Frankfurt am Main, DE;
Schott AG, Mainz, DE;
Abstract
In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.