The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Mar. 02, 2005
Yasunobu Tagusa, Ikoma, JP;
Yasunobu Tagusa, Ikoma, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In a method for fabricating a semiconductor device and an apparatus for inspecting a semiconductor, laser processing is performed at different laser powers at different positions on a monitor substrate from a plurality of substrates having undergone an SPC step, to form polycrystalline silicon film over the entire area of the substrate. Thereafter, in an optimum power inspection/extraction step, the polycrystalline silicon film formed with varying film quality on the monitor substrate is inspected on inspection equipment to determine the optimum laser power. Then, in a laser processing step, the surface of the subsequent substrates having undergone the SPC step is irradiated with laser at the optimum laser power. Thus, high-quality polycrystalline silicon film is formed over the entire area of the substrate.