The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8099842 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 24, 2012

Filed:

Sep. 04, 2009
Applicant:

Eun-soo Jeong, Gangnam-gu, KR;

Inventor:

Eun-Soo Jeong, Gangnam-gu, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/053 (2006.01); H04R 17/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to the present application, a method of manufacturing a piezoelectric transistor may include forming a cavity over a substrate, such as a semiconductor substrate. The method may include depositing and patterning metal material over a portion of a cavity, and may include depositing an oxide film over a cavity and/or patterned metal material. Piezoelectric material may be deposited over an oxide film and patterned to avoid connection with metal material. The method may include depositing a second oxide film over a substrate including piezoelectric material. Metal wiring may be formed and may apply voltage to piezoelectric material that may be in contact with a semiconductor substrate.


Find Patent Forward Citations

Jeong, Eun-Soo. (2012). Method of manufacturing a piezoelectric transistor (U.S. Patent No. 8099842). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8099842

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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