The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Dec. 03, 2009
Tom Baehr-jones, Seattle, WA (US);
Michael J. Hochberg, Seattle, WA (US);
Tom Baehr-Jones, Seattle, WA (US);
Michael J. Hochberg, Seattle, WA (US);
University of Washington, Seattle, WA (US);
Abstract
A novel electroabsorption modulator based on tuning the Fermi level relative to mid-gap states in a semiconductor. The modulator includes a semiconductor waveguide that has an input port and an output port. Between the input port and the output port is a section of the waveguide that functions as an electroabsorptive region. Adjacent to the electroabsorptive region are electrical contacts. In operation by adjusting voltages on the electrical contacts, the quasi-Fermi level in the electroabsorptive region of the semiconductor waveguide is brought above or below mid band-gap electronic states. As these states transition between occupancy and vacancy, the absorption coefficient for optical radiation in the electroabsorptive region of the semiconductor changes. As this change in absorption coefficient modulates the intensity of transmitted radiation in response to an input data stream driving the voltages, the device functions as a semiconductor optical modulator in accordance with the principles of the invention.