The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

Feb. 08, 2010
Applicants:

Ben Wei Chen, Fremont, CA (US);

David Hong-dien Chen, Irvine, CA (US);

Jason Jajen Chen, Walnut, CA (US);

Inventors:

Ben Wei Chen, Fremont, CA (US);

David Hong-Dien Chen, Irvine, CA (US);

Jason Jajen Chen, Walnut, CA (US);

Assignee:

Kingston Technology Corporation, Fountain Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A Flash memory card is disclosed comprising a substrate, a Flash memory die on top of the substrate, a controller die on top of the Flash memory die, and an interposer coupled to with the controller die and on top of the Flash memory die wherein the interposer results in substantial reduced wire bonding to the substrate. The interposer can surround or be placed side by side with the controller die. A system and method in accordance with the present invention achieves the following objectives: (1) takes advantage of as large of a Flash memory die as possible, to increase the density of the Flash card by reducing the number of wire bond pads on the substrate and enabling insertion of the largest die possible that can fit inside a given card interior boundary; (2) more efficiently stacks Flash memory dies to increase density of the Flash card; and (3) has a substantially less number of bonding wires to the substrate as possible, to improve production yield.


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