The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

May. 27, 2011
Applicants:

Katsuya Arai, Kyoto, JP;

Toshihiro Kogami, Kyoto, JP;

Hiroaki Yabu, Kyoto, JP;

Inventors:

Katsuya Arai, Kyoto, JP;

Toshihiro Kogami, Kyoto, JP;

Hiroaki Yabu, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electro static discharge protection element being formed by a diode including a well region of a first conductivity type on a surface of a semiconductor substrate, and a first diffusion layer of a second conductivity type in the well region. The first diffusion layer is surrounded by a second diffusion layer of the first conductivity type in the well region. The first diffusion layer has a surface on which a first contact region connected to an input/output terminal is formed. The first diffusion layer has a surface on which a second contact region connected to a reference voltage terminal is formed.


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