The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
May. 25, 2011
Masaki Koyama, Nukata-gun, JP;
Yoshifumi Okabe, Anjo, JP;
Makoto Asai, Anjo, JP;
Takeshi Fujii, Matsumoto, JP;
Koh Yoshikawa, Matsumoto, JP;
Masaki Koyama, Nukata-gun, JP;
Yoshifumi Okabe, Anjo, JP;
Makoto Asai, Anjo, JP;
Takeshi Fujii, Matsumoto, JP;
Koh Yoshikawa, Matsumoto, JP;
Denso Corporation, Kariya, JP;
Fuji Electric Device Technology Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.