The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

Nov. 23, 2006
Applicants:

Qiu-hong HU, Göteborg, SE;

Magnus Willander, Linköping, SE;

Victor Kouzmine, Göteborg, SE;

Inventors:

Qiu-Hong Hu, Göteborg, SE;

Magnus Willander, Linköping, SE;

Victor Kouzmine, Göteborg, SE;

Assignee:

Eco Spark AB, Enskede, SE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a light emitting diode (), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires () arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (), an insulating structure () arranged among the plurality of ZnO-nanowires (), to electrically separate the plurality of p-n junctions (), and a transparent conductive layer (), arranged on the at least one insulating structure () and in electrical contact with the plurality of ZnO-nanowires (), to enable application of a voltage over the plurality of p-n junctions (), thereby enabling emission of light. An advantage with the above light emitting diode () is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires () are used, it is possible to achieve a high brightness.


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