The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jan. 24, 2008
Mariantonietta Monaco, Riccia, IT;
Massimiliano Fiorito, S. Agata Li Battiati, IT;
Gianpiero Montalbano, Tremestieri Etneo, IT;
Salvatore Coffa, Tremestieri Etneo, IT;
Mariantonietta Monaco, Riccia, IT;
Massimiliano Fiorito, S. Agata Li Battiati, IT;
Gianpiero Montalbano, Tremestieri Etneo, IT;
Salvatore Coffa, Tremestieri Etneo, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A galvanic optocoupler of the type monolithically integrated on a silicon substrate and having at least one luminous source and a photodetector interfaced by means of a galvanic insulation layer. The photodetector can be a phototransistor realized in the silicon substrate, and the galvanic insulation layer () is a passivation layer of this phototransistor. The luminous source, above the galvanic insulation layer includes an integrated LED having a first and second polysilicon layer with function of cathode and anode, respectively, these first and second layers enclosing at least one light emitter layer, in particular a silicon oxide layer enriched with silicon (SRO). An integration process of a galvanic optocoupler thus made, in particular in BCD3s technology is provided.