The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8097532 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 17, 2012

Filed:

Dec. 04, 2006
Applicant:

Yukio Shakuda, Kyoto, JP;

Inventor:

Yukio Shakuda, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a method for manufacturing a semiconductor light emitting device capable of providing sufficiently low operating voltage. The method for manufacturing a semiconductor light emitting device of the present invention includes: a semiconductor laminating step of laminating a plurality of nitride semiconductor layers of to form a semiconductor laminating structure; and an electrode forming step of forming n-side electrode and p-side electrodes on the n-type and p-type semiconductor layers. In the electrode forming step, after a first metallic layer including a Ni layer constituting a part of the n-side electrode is formed on a surface of a forming region of the n-side electrode, the first metallic layer is annealed in an atmosphere containing nitrogen and oxygen.


Find Patent Forward Citations

Shakuda, Yukio. (2012). Method for manufacturing a semiconductor light emitting device (U.S. Patent No. 8097532). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8097532

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