The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jun. 05, 2008
Takumi Shibata, Kariya, JP;
Shouichi Yamauchi, Nagoya, JP;
Syouji Nogami, Tokyo, JP;
Tomonori Yamaoka, Tokyo, JP;
Takumi Shibata, Kariya, JP;
Shouichi Yamauchi, Nagoya, JP;
Syouji Nogami, Tokyo, JP;
Tomonori Yamaoka, Tokyo, JP;
Denso Corporation, Kariya, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.