The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Feb. 06, 2007
Wenxu Xianyu, Suwon-si, KR;
Young-soo Park, Suwon-si, KR;
Jun-ho Lee, Seoul, KR;
Hyuk Lim, Seoul, KR;
Hans S. Cho, Seoul, KR;
Huaxiang Yin, Yongin-si, KR;
Wenxu Xianyu, Suwon-si, KR;
Young-soo Park, Suwon-si, KR;
Jun-ho Lee, Seoul, KR;
Hyuk Lim, Seoul, KR;
Hans S. Cho, Seoul, KR;
Huaxiang Yin, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.