The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jun. 26, 2008
Takashi Hodota, Ichihara, JP;
Takashi Hodota, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extraction surface.