The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

Jan. 08, 2010
Applicants:

Roman Y. Korotkov, Boothwyn, PA (US);

David A. Russo, Audubon, PA (US);

Thomas D. Culp, La Crosse, WI (US);

Gary S. Silverman, Chadds Ford, PA (US);

Pierre Beaujuge, King of Prussia, PA (US);

Inventors:

Roman Y. Korotkov, Boothwyn, PA (US);

David A. Russo, Audubon, PA (US);

Thomas D. Culp, La Crosse, WI (US);

Gary S. Silverman, Chadds Ford, PA (US);

Pierre Beaujuge, King of Prussia, PA (US);

Assignee:

Arkema Inc., King of Prussia, PA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/06 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed.


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