The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Oct. 01, 2008
Andre Bouchet, Cholet, FR;
Bertrand Gerfault, St MaCaire en Mauges, FR;
Andre Bouchet, Cholet, FR;
Bertrand Gerfault, St MaCaire en Mauges, FR;
Thales, , FR;
Abstract
The present invention relates to a protection circuit for MOS-technology field-effect transistors. The circuit comprises at least one MOSFET protected by a module for blocking said MOSFET, the module being placed between the gate of the MOSFET and an electrical conductor, the module comprising switched connection means having at least two states: a first state which connects the gate of the MOSFET to the conductor, which is maintained at an electrical potential suitable for blocking the MOSFET, this first state being activated in the presence of an alarm signal; and a second state which disconnects the gate of the MOSFET, this second state being activated in the absence of the alarm signal. The invention applies notably to the protection of the power MOSFETs included in the amplification stages of electronic systems.