The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
May. 23, 2008
Toshiyuki Ayukawa, Tokyo, JP;
Takahiko Machita, Tokyo, JP;
Daisuke Miyauchi, Tokyo, JP;
Tsutomu Chou, Tokyo, JP;
Koji Shimazawa, Tokyo, JP;
Shinji Hara, Tokyo, JP;
Tomohito Mizuno, Tokyo, JP;
Yoshihiro Tsuchiya, Tokyo, JP;
Toshiyuki Ayukawa, Tokyo, JP;
Takahiko Machita, Tokyo, JP;
Daisuke Miyauchi, Tokyo, JP;
Tsutomu Chou, Tokyo, JP;
Koji Shimazawa, Tokyo, JP;
Shinji Hara, Tokyo, JP;
Tomohito Mizuno, Tokyo, JP;
Yoshihiro Tsuchiya, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.