The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Apr. 16, 2010
Applicants:
Chun-wen Paul Huang, Methuen, MA (US);
Mark Doherty, Westford, MA (US);
Philip Michael Antognetti, Woburn, MA (US);
Inventors:
Chun-Wen Paul Huang, Methuen, MA (US);
Mark Doherty, Westford, MA (US);
Philip Michael Antognetti, Woburn, MA (US);
Assignee:
SiGe Semiconductor Inc., Ottawa, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
Abstract
A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
Quick Actions:
Huang, Chun-Wen. (2012). System and method of transistor switch biasing in a high power semiconductor switch (U.S. Patent No. 8093940). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8093940
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile