The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Sep. 01, 2008
Arnaud Garnier, Grenoble, FR;
Arnaud Garnier, Grenoble, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A process for obtaining a hybrid substrate that includes at least one active layer of Group III/N material for applications in the field of electronics, optics, photovoltaics or optoelectronics. The method includes selecting a source substrate of Group III/N material having a hexagonal single crystal crystallographic structure; carrying out an implantation of Hehelium ions into the source substrate through an implantation face which lies in a plane approximately parallel with the 'c' crystallographic axis of the material, at an implantation dose equal to or greater than 1×10He/cmand 1×10He/cm, to form therein a number of nanocavities defining a weakened zone which delimits the active layer; and transferring the active layer by applying an overall energy budget capable of causing detachment of the layer from the source substrate, wherein the budget also causes the nanocavities to grow into cavities.