The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Dec. 12, 2006
Applicant:
Sang Kyun Shim, Gwangju, KR;
Inventor:
Sang Kyun Shim, Gwangju, KR;
Assignee:
LG Innotek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.
Shim, Sang. (2012). Nitride semiconductor light emitting device and method for fabricating the same (U.S. Patent No. 8093625). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8093625
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile