The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Nov. 28, 2006
Masayuki Sonobe, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
Mitsuhiko Sakai, Kyoto, JP;
Rohm Co., Ltd., Kyoto-Shi, JP;
Abstract
There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion () provided on a first light reflection layer () provided on a substrate (). The first light reflection layer () is formed with laminating a low refractivity layer () and a high refractivity layer () which have a different refractivity from each other, and the low refractivity layer () of the first light reflection layer is formed with a single layer structure of an AlGaN layer (0≦x≦1), and the high refractivity layer () of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlGaN layer (0≦y≦0.5 and y<x) or an InGaN layer (0<t≦0.5) and an InGaN layer (0<u≦1 and t<u).