The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2012

Filed:

Jun. 14, 2010
Applicants:

Ta-wei Chiu, Hsin-Chu, TW;

Yi-sheng Cheng, Hsin-Chu, TW;

Shih-yi Yen, Hsin-Chu, TW;

Inventors:

Ta-Wei Chiu, Hsin-Chu, TW;

Yi-Sheng Cheng, Hsin-Chu, TW;

Shih-Yi Yen, Hsin-Chu, TW;

Assignee:

AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract

A pixel structure includes a patterned semiconductor layer disposed on a transistor region of the substrate, a first capacitor electrode disposed on a capacitor region of the substrate, a gate dielectric layer disposed on the first capacitor electrode, a gate disposed on a channel region of the patterned semiconductor layer, a second capacitor electrode, a dielectric layer, and an aluminum capacitor electrode sequentially disposed on the gate dielectric layer of the capacitor region, a first dielectric layer disposed on the gate and the aluminum capacitor electrode, at least one first wire disposed in the first dielectric layer for electrically connecting source/drain region of the patterned semiconductor layer and the aluminum capacitor electrode, a second dielectric layer disposed on the first wire, and a first transparent conductive layer disposed on the second dielectric layer and connected to the first wire.


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