The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8093586 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 10, 2012

Filed:

Jan. 30, 2008
Applicants:

Noriyuki Shimoji, Kyoto, JP;

Suguru Okuyama, Kyoto, JP;

Yoshiaki Oku, Kyoto, JP;

Inventors:

Noriyuki Shimoji, Kyoto, JP;

Suguru Okuyama, Kyoto, JP;

Yoshiaki Oku, Kyoto, JP;

Assignees:

Pioneer Corporation, Tokyo, JP;

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 29/04 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.


Find Patent Forward Citations

Loading…