The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Nov. 21, 2007
Sang Joon Lee, Ansan-si, KR;
Duck Hwan OH, Ansan-si, KR;
Kyung Hae Kim, Ansan-si, KR;
Chang Seok Han, Ansan-si, KR;
Sang Joon Lee, Ansan-si, KR;
Duck Hwan Oh, Ansan-si, KR;
Kyung Hae Kim, Ansan-si, KR;
Chang Seok Han, Ansan-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Abstract
A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.