The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Nov. 16, 2006
Yusuke Fukuoka, Nara, JP;
Katsushi Kishimoto, Kyoto, JP;
Yusuke Fukuoka, Nara, JP;
Katsushi Kishimoto, Kyoto, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a plasma processing device capable of forming a film in a favorable manner irrespective of deflection generated in an anode electrode and a cathode electrode in the case where an area of the electrodes is increased. A plasma processing deviceincludes a chamber, a gas introducing portion, an exhaust unit, and a high-frequency power supply unit. In the chamber, there are provided an anode electrode (first electrode)having a flat-plate shape, a cathode electrode (second electrode)having a flat-plate shape, and first supporting membersand second supporting membersfor slidably supporting the two electrodesandin parallel with each other. The cathode electrodeis provided so as to face the anode electrode. The anode electrodeand the cathode electrodeare not fixed with screws or the like but are merely placed on the first supporting membersand the second supporting members. In the anode electrodeand the cathode electrode, deflection amounts when they are freely deflected under their own weights are equal to each other, and maximum deflection amounts of the two electrodesandare also equal to each other.