The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Dec. 18, 2009
Applicant:
Hyon Chol Lim, Seoul, KR;
Inventor:
Hyon Chol Lim, Seoul, KR;
Assignee:
Dongbu HiTek Co., Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bipolar junction transistor and a method of manufacturing a bipolar junction transistor are disclosed. An exemplary bipolar junction transistor includes a second conductivity type base region in a first conductivity type substrate, step-shaped recesses in the base region, a polysilicon layer doped with a first conductivity type impurity in the step-shaped recesses, and a step-shaped emitter region between the polysilicon layer and the base region.