The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Nov. 24, 2010
Myung Shik Lee, Seoul, KR;
Jin Gu Kim, Gyeonggi-do, KR;
Myung Shik Lee, Seoul, KR;
Jin Gu Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method of manufacturing a nonvolatile memory device includes forming a tunnel insulating layer over a semiconductor substrate, forming a charge trap layer, including first impurity ions of a first concentration, over the tunnel insulating layer, forming a compensation layer, including second impurity ions of a second concentration, over the charge trap layer, diffusing the second impurity ions within the compensation layer toward the charge trap layer, removing the compensation layer, forming a dielectric layer on surfaces of the charge trap layer, and forming a conductive layer for a control gate on the dielectric layer.