The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jun. 27, 2008
Applicant:
Chun-hee Lee, Gyeonggi-do, KR;
Inventor:
Chun-Hee Lee, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Bubal-eub, Ichon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a vertical channel transistor includes forming a structure including a plurality of trimmed pillar patterns, forming a conductive layer for a gate electrode including a seam over a resultant structure with the pillar patterns, performing an etch-back process until the seam is exposed, and forming a gate electrode by etching the etch-backed conductive layer.
Lee, Chun-Hee. (2012). Method for fabricating vertical channel transistor (U.S. Patent No. 8093122). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8093122
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile