The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
May. 24, 2006
Katsumi Kushiya, Tokyo, JP;
Katsumi Kushiya, Tokyo, JP;
Showa Shell Sekiyu K.K., Tokyo, JP;
Abstract
A high-resistance buffer layer and a window layer (transparent conductive film) are successively formed by the MOCVD method to obtain the same output characteristics as in conventional film deposition by the solution deposition method and to simplify a film deposition method and apparatus. Thus, the cost of raw materials and the cost of waste treatments are reduced to attain a considerable reduction in production cost. After a metallic base electrode layerB and a light absorption layerC are formed in this order on a glass substrateA, a high-resistance buffer layerD and a window layerE are successively formed in this order in a multi layer arrangement on the light absorption layerC of the resultant semifinished solar cell substrate by the MOCVD method. Consequently, a film deposition method and apparatus are simplified and the cost of raw materials and the cost of waste treatments can be reduced.