The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Apr. 19, 2010
Applicant:
Hyun-pil Noh, Seongnam-si, KR;
Inventor:
Hyun-Pil Noh, Seongnam-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonngi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8232 (2006.01); H01L 21/335 (2006.01); H01L 21/8222 (2006.01); H01L 21/331 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method of manufacturing image sensors having a plurality of gettering regions. In the method, a gate electrode may be formed on a semiconductor substrate. A source/drain region may be formed in the semiconductor substrate to be overlapped with the gate electrode. A gettering region may be formed in the semiconductor substrate to be adjacent to the source/drain region.