The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Mar. 03, 2009
Shih Cheng Huang, Hsinchu, TW;
Po Min Tu, Chiayi County, TW;
Ying Chao Yeh, Taipei County, TW;
Wen Yu Lin, Taichung County, TW;
Peng Yi Wu, Taichung, TW;
Chih Peng Hsu, Tainan County, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Shih Cheng Huang, Hsinchu, TW;
Po Min Tu, Chiayi County, TW;
Ying Chao Yeh, Taipei County, TW;
Wen Yu Lin, Taichung County, TW;
Peng Yi Wu, Taichung, TW;
Chih Peng Hsu, Tainan County, TW;
Shih Hsiung Chan, Hsinchu County, TW;
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Abstract
A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.