The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jun. 12, 2007
Takeo Ishibashi, Tokyo, JP;
Kazumasa Yonekura, Tokyo, JP;
Masahiro Tadokoro, Tokyo, JP;
Kazunori Yoshikawa, Tokyo, JP;
Yoshiharu Ono, Tokyo, JP;
Takeo Ishibashi, Tokyo, JP;
Kazumasa Yonekura, Tokyo, JP;
Masahiro Tadokoro, Tokyo, JP;
Kazunori Yoshikawa, Tokyo, JP;
Yoshiharu Ono, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
It is an object of the present invention to provide a method of manufacturing a semiconductor device that reduces the deterioration in processed configuration and the pattern roughness of a film to be processed, and is close to the original design and applicable to a dual damascene step and the like. The manufacturing method comprises a processing mask layer forming step of forming a processing mask layer (a lower organic film and a middle layer) comprising at least one film, and hardening treatment for at least one film of the processing mask layer by applying a film and heat hardening treatment; a processing mask layer etching step of applying a resist film for exposure to the processing mask layer, exposing and developing it to form a resist pattern, and etching the processing mask layer using the resist pattern as a mask; and a film to be processed etching step of etching the film to be processed using the pattern of the processing mask layer formed at the processing mask layer etching step as a mask.