The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2012

Filed:

Aug. 07, 2007
Applicant:

Yong-tae Yim, Suwon-si, KR;

Inventor:

Yong-Tae Yim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

An error correction circuit and method for reducing a miscorrection probability and a semiconductor memory device including the circuit are provided. The error correction circuit includes an error check and correction (ECC) encoder and an ECC decoder. The ECC encoder generates syndrome data enabling h-bit error correction based on information data and a generator polynomial, where 'h' is 2 or an integer greater than 2. The ECC decoder may operate in a single mode for detecting an error position with respect to a maximum of (h−j) bits in the information data based on encoded data including the information and the syndrome data, where 'j' is 1 or an integer greater than 1. Alternatively, the ECC decoder may operate in a first operation mode for detecting an error position with respect to a maximum of “h” bits in the information data or in a second operation mode for detecting an error position with respect to a maximum of (h−j) bits in the information data based on encoded data including the information and the syndrome data. Accordingly, the miscorrection probability is reduced, and therefore, data reliability is increased.


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