The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8089157 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 03, 2012

Filed:

Dec. 14, 2010
Applicants:

Cyril Cabral, Jr., Mahopac, NY (US);

Hariklia Deligianni, Tenafly, NJ (US);

Randolph F. Knarr, Yorktown Heights, NY (US);

Sandra G. Malhotra, Beacon, NY (US);

Stephen Rossnagel, Pleasantville, NY (US);

Xiaoyan Shao, Yorktown Heights, NY (US);

Anna Topol, Yorktown Heights, NY (US);

Philippe M. Vereecken, Leuven, BE;

Inventors:

Cyril Cabral, Jr., Mahopac, NY (US);

Hariklia Deligianni, Tenafly, NJ (US);

Randolph F. Knarr, Yorktown Heights, NY (US);

Sandra G. Malhotra, Beacon, NY (US);

Stephen Rossnagel, Pleasantville, NY (US);

Xiaoyan Shao, Yorktown Heights, NY (US);

Anna Topol, Yorktown Heights, NY (US);

Philippe M. Vereecken, Leuven, BE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A contact metallurgy structure comprising a patterned dielectric layer having vias on a substrate; a silicide layer of cobalt and/or nickel located at the bottom of vias; a contact layer comprising Ti located in vias on top of the silicide layer; a diffusion layer located in vias and on top of the contact layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer comprises at least one member selected from the group consisting of copper, ruthenium, rhodium platinum, palladium, iridium, rhenium, tungsten, gold, silver and osmium and alloys thereof. When the metal fill layer comprises rhodium, the diffusion layer is not required. Optionally a seed layer for the metal fill layer can be employed.


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