The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Jun. 10, 2009
Xiangdong Chen, Irvine, CA (US);
Henry Kuo-shun Chen, Irvine, CA (US);
Kent Charles Oertle, Phoenix, AZ (US);
Jennifer Chiao, Irvine, CA (US);
Xiangdong Chen, Irvine, CA (US);
Henry Kuo-Shun Chen, Irvine, CA (US);
Kent Charles Oertle, Phoenix, AZ (US);
Jennifer Chiao, Irvine, CA (US);
Broadcom Corporation, Irvine, CA (US);
Abstract
According to one embodiment, a method for selective gate halo implantation includes forming at least one gate having a first orientation and at least one gate having a second orientation over a substrate. The method further includes performing a halo implant over the substrate. The first orientation allows a halo implanted area to be formed under the at least one gate having the first orientation and the second orientation prevents a halo implanted area from forming under the at least one gate having the second orientation. The halo implant is performed without forming a mask over the at least one gate having the first orientation or the at least one gate having the second orientation. The at least one gate having the first orientation can be used in a low voltage region of a substrate, while the at least one gate having the second orientation can be used in a high voltage region.