The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Feb. 22, 2005
Hiroaki Matsumura, Tokushima, JP;
Keiji Sakamoto, Anan, JP;
Tsuyoshi Hirao, Tokushima, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The substrate is a nitride semiconductor substrate whose surface includes two regions. The first region has an electrode formed thereon and a second region does not have any electrodes formed thereon. A first n-type impurity is included in a higher concentration in the first region than that in the second region in the vicinity of the surface of the substrate.