The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Oct. 22, 2009
Byoung-june Kim, Seongnam-si, KR;
Sung-hoon Yang, Seoul, KR;
Min-seok OH, Yongin-si, KR;
Jae-ho Choi, Seoul, KR;
Yong-mo Choi, Cheongju-si, KR;
Byoung-June Kim, Seongnam-si, KR;
Sung-Hoon Yang, Seoul, KR;
Min-Seok Oh, Yongin-si, KR;
Jae-Ho Choi, Seoul, KR;
Yong-Mo Choi, Cheongju-si, KR;
Abstract
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.