The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Jan. 08, 2009
Applicant:
Ikuo Fukui, Niigata-ken, JP;
Inventor:
Ikuo Fukui, Niigata-ken, JP;
Assignee:
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a thin-film field effect transistor with a MIS structure, the materials of which the semiconductor and insulating layers are made are polymers which are dissolvable in organic solvents and have a weight average molecular weight of more than 2,000 to 1,000,000. Use of polymers for both the semiconductor layer and insulating layer of TFT eliminates such treatments as patterning and etching using photoresists in the prior art circuit-forming technology, reduces the probability of TFT defects and achieves a reduction of TFT manufacture cost.