The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jul. 16, 2009
Takuji Tanaka, Kawasaki, JP;
Takuji Tanaka, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device in which potential is uniformly controlled and in which the influence of noise is reduced. A p-type well region is formed beneath a surface of a p-type Si substrate. n-type MOS transistors are formed on the p-type well region. An n-type well region is formed in the p-type Si substrate so that it surrounds the p-type well region. A plurality of conductive regions which pierce through the n-type well region are formed at regular intervals. By doing so, parasitic resistance from the p-type Si substrate, through the plurality of conductive regions, to the n-type MOS transistors becomes low. Accordingly, when back bias is applied to a contact region, the back bias potential of the n-type MOS transistors can be controlled uniformly. As a result, the influence of noise from the p-type Si substrate or the p-type well region can be reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile