The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jun. 30, 2010
Applicants:
Christophe Figuet, Crolles, FR;
Mark Kennard, Crolles, FR;
Inventors:
Christophe Figuet, Crolles, FR;
Mark Kennard, Crolles, FR;
Assignee:
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a, providing a buffer layer with a second in-plane lattice parameter aand providing a top layer over the buffer layer. In order to improve the surface roughness of the semiconductor heterostructure, an additional layer is provided in between the buffer layer and the top layer, wherein the additional layer has a third in-plane lattice parameter awhich is in between the first and second lattice parameters.