The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Sep. 29, 2010
Ya-hui Peng, Hsin-Chu, TW;
Yi-ya Tseng, Hsin-Chu, TW;
Kun-fu Huang, Hsin-Chu, TW;
Chih-hsien Chen, Hsin-Chu, TW;
Han-tu Lin, Hsin-Chu, TW;
Ya-Hui Peng, Hsin-Chu, TW;
Yi-Ya Tseng, Hsin-Chu, TW;
Kun-Fu Huang, Hsin-Chu, TW;
Chih-Hsien Chen, Hsin-Chu, TW;
Han-Tu Lin, Hsin-Chu, TW;
Au Optronics Corporation, Hsin-Chu, TW;
Abstract
A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 10atoms/cmand 10atoms/cm. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.