The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2011

Filed:

Nov. 13, 2008
Applicants:

Jong-won Lee, Seongnam-si, KR;

Sang-yeob Han, Anyang-si, KR;

Chang-ki Hong, Seongnam-si, KR;

Bo-un Yoon, Seoul, KR;

Jae-dong Lee, Seongnam-si, KR;

Inventors:

Jong-Won Lee, Seongnam-si, KR;

Sang-Yeob Han, Anyang-si, KR;

Chang-Ki Hong, Seongnam-si, KR;

Bo-Un Yoon, Seoul, KR;

Jae-Dong Lee, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized.


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