The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jun. 20, 2005
Applicants:
Tomonari Yamamoto, Kawasaki, JP;
Kenichi Okabe, Kawasaki, JP;
Inventors:
Tomonari Yamamoto, Kawasaki, JP;
Kenichi Okabe, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
The depletion of a gate electrode () is suppressed in such a way that impurities are introduced into the gate electrode that is formed on a semiconductor substrate (), with a gate insulating film () interposed between the gate electrode () and the semiconductor substrate (), and that, by irradiating a laser beam onto the gate electrode (), the introduced impurities are made to diffuse up to the interface between the gate electrode () and the gate insulating film ().